|Site Map||Home | About Us | Contact Us | Visit Us | 蓝宝石生长炉用钨钼制品 | 藍寶石生長爐用鎢鉬製品 | サファイア用タングステンとモリブデン製品の炉 | Language|
Tungsten and Sapphire
Tungsten Crucible for Sapphire Growth Furnace
Tungsten Crucible Cover for Crystal Growth Furnace
Tungsten Bracket for Sapphire Furnace
Tungsten Heat Shield for Crystal Furnace
Tungsten Electrode Screen for Sapphire Crystal Furnace
Tungsten Heater for Sapphire Growth Furnace
Tungsten Wire Heater for Sapphire Crystal Furnace
Tungsten Rhenium Wire for Sapphire Crystal Growth Furnace
|You're viewing: Home >>Sapphire Grow Method- Micro-Pulling And Shoulder Expanding at Cooled Center (SAPMAC)
Micro-pulling and shoulder expanding at cooled center is a sapphire growth method, which is also called micro-pulling rotation Kyropoulos. The is an improved method based on Kyropoulos Method and Pulling Method by Institute of Composite Structures from the Harbin Institute of Technology. It is used to grow large size crystal. Crystal growing system includes control system, vacuum system, heating body, cooling system and thermal protection systems. The following a picture, which is a schematic shoulder cold heart to put the system trace Czochralski method, SAPMAC grown single crystal, the outlook is usually pear-shaped, crystal diameter crucible can grow to more than the inner diameter of the small size of 10 ~ 30mm. The seed is processed into split shape, use seed clips at the bottom of the heat exchanger. Rotating and pulling the heat exchanger can be accomplished seed fixed, crystals, and the exchange interaction between the heat exchanger, crystal and melt.
The main features for SAPMAC Methods:
1) Put through a cold heart shoulder, to ensure that the large size of the crystal growth process of the crystal to the entire end product of genetic characteristics of a good, good material quality.
2) Through high-precision energy control with micro-pulling, so that no significant thermal disturbance in the whole process of crystal growth, significantly reduced the probability of defect initiation than other methods.
3) Since only trace pulling, reducing the temperature field perturbation. Make more uniform temperature field, so as to ensure the success rate of single crystal growth.
4) Throughout the crystal growth process, the crystal is not made crucible, it is still in the hot zone. It can precisely control the cooling rate, to reduce the thermal stress.
5) Suitable for the growth of large-size crystals, the material is more than 1.2 times the comprehensive utilization Kyropoulos law.
6) Use water as the working fluid within the heat exchanger, the crystal can be achieved in-situ annealing, short test cycle than other methods, and low cost.
7) In the crystal growth process, we can easily observe the growth of crystals.
8) Free surface crystal growth, the crucible is not mandatory, can reduce stress Crystals.
9) Can easily use the desired orientation seed and "necking" process, it helps to relatively fast rate.
If there is any other question refer to tungsten crucible for sapphire growth furnace, please feel free to contact us through the following methods:
|Media Center>||[Information Bank] [Dictionary of tungsten] [Products Pictures' Bank] [Live Video of Processing] [Videos of Machining] [Catalogs]|
|Chinatungsten Group>||[Tungsten Carbide Supplier] [CTIA] [CTIA-EN] [CTIA-日本語] [Molybdenum Product] [Tungsten Darts] [Tungsten Wire] [Infosys] [Tungsten Bars/Rods] [Paper Weight] [Tungsten Carbide Powder] [Tungsten Copper] [Chatroulette] [Darts Wholesale] [Tungsten Wikipedia]|
|[Tungsten Alloy] [Tungsten Carbide] [XATCM ] [Infosys] [DartChina Club] [Tungsten Heater] [Tungsten Powder] [Tungsten Fishing]|
|[Bucking Bar] [Tungsten Heavy Alloys] [Tungsten Carbide Jewelry] [Metals Price][Xiamen Tungsten]|